ASML and imec (Interuniversity Microelectronics Centre), a renowned research and development organization based in Leuven, Belgium, inaugurated a new High NA EUV Lithography Lab in Veldhoven, the Netherlands.
The new facility is equipped with a prototype High NA EUV scanner (TWINSCAN EXE:5000) and surrounding processing and metrology tools.
The opening of the joint ASML-imec High NA EUV Lab marks a significant milestone in preparing High Numerical Aperture (NA) Extreme Ultraviolet (EUV) technology for high-volume manufacturing, projected for the 2025-2026 timeframe. This facility provides leading-edge logic and memory chip manufacturers access to a High NA EUV prototype scanner and essential tools, aiding them in de-risking the technology and developing private use cases before the scanners are operational in their production fabs. Additionally, the broader ecosystem of material and equipment suppliers, as well as participants in imec’s High NA patterning program, will also have access.
The readiness of the 0.55 NA EUV scanner and supporting infrastructure followed extensive preparations starting in 2018. ASML and ZEISS developed specific solutions for the High NA EUV scanner, addressing challenges such as the source, optics, lens anamorphicity, stitching, reduced depth of focus, edge placement errors, and overlay accuracy. Concurrently, imec and its extended supplier network prepared the patterning ecosystem, developing advanced materials, photomasks, metrology and inspection techniques, imaging strategies, optical proximity correction, and integrated patterning and etch techniques. These efforts culminated in the first successful exposures of 10 nm dense lines printed on metal oxide resists using the prototype scanner.
Key Points:
- ASML and imec open High NA EUV Lab to prepare for high-volume manufacturing.
- High NA EUV anticipated for production use in 2025-2026.
- Lab provides access to prototype scanner and tools for chip manufacturers.
- Broader ecosystem of material and equipment suppliers also gain access.
- Preparations since 2018 involved ASML, ZEISS, and imec's extended network.
- First successful exposures of 10 nm dense lines achieved with prototype scanner.
