Imec and Ghent University demonstrated for the first time the ability to grow indium phosphide lasers monolithically integrated on 300mm silicon substrates in a CMOS pilot line.
The researchers used a production grade metal-organic vapor-phase epitaxial (MOVPE) growth reactor to grow an indium phosphide semiconductor in a pre-patterned oxide template , realizing indium phosphide waveguide arrays across the entire 300mm substrate.
Such laser-powered...
