Imec and Ghent University demonstrated for the first time the ability to grow indium phosphide lasers monolithically integrated on 300mm silicon substrates in a CMOS pilot line.
The researchers used a production grade metal-organic vapor-phase epitaxial (MOVPE) growth reactor to grow an indium phosphide semiconductor in a pre-patterned oxide template , realizing indium phosphide waveguide arrays across the entire 300mm substrate.
Such laser-powered photonic integrated circuits (PICs) could be used to interface between future logic and memory chips.
http://www2.imec.be/be_en/press/imec-news/ghent-university-nature-si-photonics-indium-phosphide-lasers.html
The researchers used a production grade metal-organic vapor-phase epitaxial (MOVPE) growth reactor to grow an indium phosphide semiconductor in a pre-patterned oxide template , realizing indium phosphide waveguide arrays across the entire 300mm substrate.Such laser-powered photonic integrated circuits (PICs) could be used to interface between future logic and memory chips.
http://www2.imec.be/be_en/press/imec-news/ghent-university-nature-si-photonics-indium-phosphide-lasers.html
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