
Samsung Electronics has begun mass production of the industry’s first 256-gigabit, three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs).
Samsung’s new 256Gb 3D V-NAND flash doubles the density of conventional 128Gb NAND flash chips. In addition to enabling 32 gigabytes (256 gigabits) of memory storage on a single die, the new chip will also easily...