
Researchers at NTT announced a breakthrough in the development of GaN-based thin-film devices from substrates, where an extremely thin layer of boron nitride (BN) is grown between a sapphire substrate and the GaN-based semiconductor and works as a release layer. The newly developed MeTRe (Mechanical Transfer using a Release layer) method of production facilitates the transfer of the resulting nitride structures (typically a few μm thick) to more...