
IBM unveiled a 2 nanometer semiconductor design and process breakthrough based on a new Gate-All-Around (GAA) nanosheet device architecture. The technology is implemented on a 300 millimeter (mm) wafer built at IBM Research’s semiconductor research facility in Albany, New York.IBM said it is able to fit 50 billion transistors in a space roughly the size of a fingernail. A 2 nm chip node transistor equates to an approximate 45 percent performance...