Diablo Technologies was awarded U.S. patent No. 8,713,379, entitled a “System and method of interfacing co-processors and input/output devices via a main memory system.”
The ‘379 patent describes:
- A method for connecting non-volatile memory directly to the memory controllers of a processor
- A learning machine to handle data interleaving/de-interleaving and data scrambling/de-scrambling algorithms for DDR3/4-based memory controllers
- A method to remap the non-linear DIMM address space back to linear address space used by the driver.
“The introduction of MCS has been deemed as one of the most disruptive breakthroughs in flash memory technology,” said Riccardo Badalone, CEO and Co-founder of Diablo Technologies. “Receiving this patent is another important milestone as Diablo continues to accelerate its strategic growth initiatives. We have significant innovations planned in the MCS roadmap and this validation underscores our commitment to deliver industry-leading solutions.”
In addition, Ottawa-based Diablo Technologies announced the opening of an office in San Jose, California.
http://www.diablo-technologies.com/
- Diablo Technologies has developed a Memory Channel Storage (MCS) technology that provides tens of terabytes of ultra-fast NAND flash storage in a DIMM form factor, and enables it to interface with the CPU via DDR3 at near-DRAM speeds. The company says its Memory Channel Storage allows for extremely large "big data" sets to be placed entirely within the NUMA system architecture, resulting in real-time processing and analytics. MCS significantly minimizes storage latency and provides a level of predictability that cannot be attained with pre-existing flash storage technologies. With the MCS architecture, systems in big data clusters, such as Hadoop, have access to terabytes of deterministic, ultra-low latency persistent memory.
Researchers at MIT have developed a method of using light pulses to control the electrical properties of a sheet of graphene. Short light pulses were found to change and reveal graphene’s electrical response in only a trillionth of a second.
