GlobalFoundries announced the acquisition of Tagore Technology’s proprietary and production-proven Power Gallium Nitride (GaN) IP portfolio. This high-power density solution is designed to enhance efficiency and performance in various power applications, including automotive, IoT, and AI datacenters. As the digital landscape evolves with technologies like Generative AI, GaN is emerging as a crucial solution for sustainable and efficient power management, especially in datacenters.
Tagore Technology, founded in January 2011, specializes in GaN-on-Silicon (GaN-on-Si) semiconductor technology for RF and power management applications. As a fabless semiconductor company, it operates design centers in Arlington Heights, Illinois, USA, and Kolkata, India. Tagore Technology’s R&D team focuses on developing innovative solutions leveraging wide bandgap technologies to address RF and power design challenges, accelerating time-to-market for a wide range of applications. This acquisition includes a team of experienced engineers from Tagore Technology, who will join GlobalFoundries, enhancing its technical expertise and manufacturing capabilities.
Key Points:
- GlobalFoundries acquires Tagore Technology’s Power GaN IP portfolio. Financial terms were not disclosed.
- GaN technology enhances efficiency and performance in automotive, IoT, and AI datacenter applications.
- The acquisition supports large-scale manufacturing, improving datacenter power efficiency, reducing costs, and managing heat.
- Tagore Technology engineers will join GlobalFoundries, bringing expertise in GaN technology.
- GlobalFoundries received $1.5 billion under the U.S. CHIPS and Science Act, with part of the investment aimed at high-volume GaN manufacturing.
- Gallium Nitride (GaN) is a wide bandgap semiconductor material known for its high efficiency and performance in power electronics. GaN technology is used in various semiconductor applications due to its ability to operate at higher voltages, temperatures, and frequencies compared to traditional silicon-based semiconductors. This makes GaN particularly advantageous in power conversion systems, RF amplifiers, and high-frequency communication devices. In power electronics, GaN transistors and diodes offer lower switching losses, faster switching speeds, and higher power density, leading to more efficient and compact power supplies and inverters. In RF applications, GaN’s high electron mobility and breakdown voltage enable the development of powerful and efficient RF amplifiers for wireless communication and radar systems. Furthermore, GaN is crucial in developing next-generation power devices for electric vehicles, renewable energy systems, and various industrial applications, where its superior performance characteristics contribute to overall system efficiency and reliability
