Samsung Electronics is making rapid progress in 3nm Gate-All-Around (GAA) process technology, which could see first tape out in 2021 and mass market production as early as 2022.
Compared to 7nm technology, Samsung’s 3GAE process aims to deliver a 45% reduction in chip area with 50% percent lower power consumption, and 35% higher performance, potentially benefiting applications as diverse as mobile, network, automotive, Artificial Intelligence (AI) and IoT. Samsung's GAA MBCFET (Multi-Bridge-Channel FET) uses a nanosheet architecture, enabling greater current per stack. WhileFinFET structures must modulate the number of fins in a discrete way, MBCFET™provides greater design flexibility by controlling the nanosheet width.
At Samsung Foundry Forum event in Santa Clara California, company executives outlined the fabrication roadmap from today's 10nm down to 3nm. Some highlights:
- 14/10nm - these are in high volume manufacturing. These will remain long-lasting technologies into the future
- 8nm - the most advanced non-EUV technology
- 7nm FinFET - currently under mass production for mobile applications. The first tape out was in 2018. IP re-use is supported.
- 6nm FinFET -- mass production of 6nm process devices in the second half of 2019
- 5nm FinFET - the product design of Samsung’s 5nm FinFET process, which was developed in April, is expected to be completed in the second half of this year and go under mass production in the first half of 2020
- 4nm FinFET - will represent the maximum scaling of the 7nm family, and development will be completed later this year -
- 3nm Gate-All-Around (GAA) process development is on track and will leverage MBCFET (Multi-Bridge-Channel FET) based on nanosheet technology. A Process Design Kit (PDK) version 0.1 for 3GAE was released in April. This will be the future beyond FinFET.