Showing posts with label RF. Show all posts
Showing posts with label RF. Show all posts

Tuesday, June 12, 2018

MACOM intros new RF switch portfolio

MACOM Technology Solutions introduced its latest high-performance RF switch portfolio for SATCOM, 5G wireless, test and measurement (T&M), EW and microwave radio applications.

MACOM's new GaAs-based SPDT MASW Series switch covers the 17.7 – 31 GHz frequency range, with low insertion loss of 1.6 dB, high isolation at 30dB and switching speed of 12 ns. It is offered in a lead-free 3 mm, 14-lead QFN surface mount plastic package.

MACOM's new MASW-011107 SPDT non-reflective switch, offered in bare die format, covers the DC – 26.5 GHz frequency range, with low insertion loss of 1.3 dB and high isolation at 46 dB when operating at 20 GHz. Both devices are fabricated via robust processes with full surface passivation aimed at ensuring high-performance and high reliability.

“MACOM’s heritage in high-performance RF switching is unassailable,” said Graham Board, Senior Director of Product Marketing, MACOM. “We have lead the industry for decades by leveraging our proprietary AlGaAs, HMIC and GaAs technologies to deliver technically superior switch solutions. These new switches leverage our patented low gate-lag GaAs process. This technology will not only allow us to deliver best-in-class RF performance but also fast switching speeds, which is critical in TDD systems.”

Monday, July 18, 2016

Infineon to Acquire Wolfspeed for $850 Million

Infineon Technologies AG agreed to acquire the Wolfspeed Power and RF division of Cree for US$850 million in cash (approximately Euro 740 million.  The deal also includes the related SiC wafer substrate business for power and RF power.

Wolfspeed, which is based in Research Triangle Park, North Carolina, is a premier provider of SiC-based power and GaN-on-SiC-based RF power solutions. This also includes the related core competencies in wafer substrate manufacturing for SiC, as well as for SiC with a monocrystalline GaN layer for RF power applications. It has more than 550 highly skilled employees and a strong IP portfolio of approximately 2,000 patents and patent applications.

Infineon said it expects next-generation wireless standards such as 5G, which will use frequencies up to 80 gigahertz, will require advanced compound semiconductors.  GaN-on-Si allows higher levels of integration and offers its advantages at operating frequencies of up to 10 gigahertz. GaN-on-SiC enables maximum efficiency at frequencies of up to 80 gigahertz.

“Wolfspeed’s and Infineon’s businesses and expertise are highly complementary, bringing together industry leading experts for compound semiconductors. This will enable us to create additional value for our customers with the broadest and deepest portfolio of innovative technologies and products in compound semiconductors available in the market. With Wolfspeed we will become number one in SiC-based power semiconductors. We also want to become number one in RF power," stated Dr. Reinhard Ploss, CEO of Infineon Technologies AG.

http://www.infineon.com

Monday, February 16, 2015

Ericsson Intros 200W DC/DC Module for RF

Ericsson introduced a new 200W DC/DC converter module for radio-frequency power amplifier (RFPA) applications and supplying the voltage to power transistors that are used in new generation of integrated radio amplifiers that use semiconductor technologies such as Laterally Diffused Metal Oxide Semiconductor (LDMOS).

Ericsson said its new eighth-brick formant offers ultra-wide adjustable output voltage from 15 to 33V, which makes it possible to power a wide range of power transistors and also reducing voltages when the RF power amplifier has been into sleep mode, thereby decreasing power consumption. It delivers power up to 200W and an output current up to 6.67A.

http://www.ericsson.com/news/150216-ericsson-introduces-200w-power-module_244069647_c

Wednesday, January 7, 2015

Molex Acquires SDP Telecom for RF Components

Molex has acquired SDP Telecom, a maker of RF/microwave solutions for the wireless communications industry. Financial terms were not disclosed.

SDP, which is based in Montreal, Canada, has manufacturing facilities in China. SDP will be managed by the RF/Microwave Business Unit that is part of Molex’s Global Integrated Products Division.

“Together, Molex and SDP will broaden our RF/Microwave product capabilities and create additional value for our customers in the growing wireless infrastructure market, said Tim Ruff, senior vice president, Molex. “This is a next step towards achieving our vision to offer total integrated solutions to the markets we serve.”

http://www.molex.com/


Wednesday, July 2, 2014

DARPA Develops Silicon Transmitter Operating in Millimeter-wave Range

The Defense Advanced Research Projects Agency (DARPA) announced an all-silicon, microchip-sized transmitter that operates at 94 GHz -- the first silicon-only SoC that has achieved such a high frequency, which falls in the millimeter-wave range.

Researchers with DARPA’s Efficient Linearized All-Silicon Transmitter ICs (ELASTx) program have now shown that silicon chips be used for high data rate, millimeter-wave wireless communications systems.  Conventionally, such systems have used gallium arsenide (GaAs) or gallium nitride (GaN) chips.

DARPA said its all-silicon SoC transmitter uses a digitally assisted power amplifier that dynamically adapts amplifier performance characteristics to changing signal requirements, and it can support a range of modulation formats.  Northrop Grumman Aerospace Systems supported the research program.

“This accomplishment opens the door for co-designing digital CMOS [complementary metal oxide semiconductors] and millimeter-wave capabilities as an integrated system on an all-silicon chip, which should also make possible new design architectures for future military RF systems,” said Dev Palmer, DARPA program manager.

http://www.darpa.mil/NewsEvents/Releases/2014/06/30.aspx