Tuesday, February 20, 2024

Samsung Foundry’s Gate-All-Around supports Arm Cortex-X

Samsung Electronics Co. will deliver the next generation Arm Cortex-X CPU optimized on Samsung Foundry’s latest Gate-All-Around (GAA) process technology. 

The companies have bold plans to reinvent 2-nanometer (nm) GAA for next-generation data center and infrastructure custom silicon, as well as a groundbreaking AI chiplet solution that will revolutionize the future generative artificial intelligence (AI) mobile computing market.

“As we continue into the Gen AI era, we are excited to extend our partnership with Arm to deliver the next generation Cortex-X CPU, enabling our mutual customers to create innovative products,” said Jongwook Kye, executive vice president and head of Foundry Design Platform Development at Samsung Electronics. “Both Samsung and Arm have built a solid foundation from many years of collaboration. This unprecedented level of deep design technology co-optimization has resulted in a ground-breaking accomplishment, providing access to the newest Cortex-CPU on the latest GAA process node.”

“Our longstanding collaboration with Samsung has delivered multi-generation, leading-edge innovation,” said Chris Bergey, SVP and GM of the Client Business of Arm Inc. “Optimizing Cortex-X and Cortex-A processors on the latest Samsung process node underscores our shared vision to redefine what’s possible in mobile computing, and we look forward to continuing to push boundaries to meet the relentless performance and efficiency demands of the AI era.”

Samsung announced its initial production of 3nm Multi-Bridge-Channel FET (MBCFET™), based on Samsung’s GAA technology in 2022. GAA technology allows further device scaling beyond the FinFET generation, improving power efficiency with reduced supply voltage level, and enhanced performance with higher drive current capability. The GAA implementation approach with nanosheets structure delivers maximum design flexibility and scalability.