Mitsubishi Electric will launch five new gallium arsenic (GaAs) power amplifiers for WCDMA devices. Mitsubishi Electric said it has achieved an industry-leading power added efficiency (PAE) of 45 percent, enabling lower power consumption and heat emission in data terminals. The design incorporates GaAs bipolar field effect transistor (BiFET) technology for high PAE and high level of integration.
http://www.MitsubishiElectric.com
Thursday, December 16, 2010
Mitsubishi Electric to Launch WCDMA Power Amplifiers
Thursday, December 16, 2010
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