Showing posts with label Flash. Show all posts
Showing posts with label Flash. Show all posts

Monday, October 31, 2022

Rambus posts strong Q3, exceeding guidance

Rambus posted Q3 GAAP revenue of $112.2 million, with licensing billings at $62.2 million, product at was $58.6 million, and contract and other revenue of $23.7 million. The company also generated $80 million in cash provided by operating activities in the third quarter.

“Rambus had an excellent performance in the third quarter, exceeding guidance and delivering record cash and product revenue,” said Luc Seraphin, chief executive officer of Rambus. “Our strategic focus and strong execution in data center, combined with a diverse portfolio of offerings, drive the company’s long-term profitable growth and enable consistent capital returns to our stockholders.”

Separately, Rambus extended its patent license agreement with Samsung Electronics. This substantially maintains the existing financial terms and provides Samsung with broad access to the full Rambus patent portfolio through late 2033. Other terms and details are confidential.

https://investor.rambus.com/press-releases/press-release-details/2022/Rambus-Reports-Third-Quarter-2022-Financial-Results/default.aspx

Monday, July 25, 2022

Kioxia intros enterprise NVMe SSDs with PCIe 5.0

Kioxia is now shipping new CM7 series NVMe SSDs designed with PCIe 5.0 technology in Enterprise and Datacenter Standard Form Factor (EDSFF) E3.S and 2.5-inch form factors.

The EDSFF E3 family enables the next generation of SSDs with PCIe 5.0 technology and beyond to address future data center architectures, while supporting a variety of new devices and applications. It provides improved airflow and thermals, signal integrity benefits, eliminates the need for LEDs on the drive carriers, and gives options for larger SSD capacity points.

KIOXIA CM7 Series highlights include:

  • EDSFF E3.S and 2.5-inch 15mm Z-height form factors
  • Designed to the NVMe 2.0 and PCIe 5.0 specifications
  • SFF-TA-1001 capable to support Universal Backplane Management enabled systems (also known as U.3)
  • Read-intensive (1 DWPD) capacities up to 30.72 TB
  • Mixed-use (3 DWPD) capacities up to 12.80 TB
  • Dual-port design for high availability applications
  • Flash Die Failure Protection maintains full reliability in case of a die failure
  • Support for SR-IOV, CMB, Multistream writes

https://www.kioxia.com/en-jp/top.html

Thursday, April 14, 2022

Kioxia and Western Digital invest in new flash memory plant

Kioxia and Western Digital agreed to jointly invest in the first phase of the Fab7 (Y7) manufacturing facility at Kioxia’s Yokkaichi Plant in the Mie Prefecture of Japan. 

This joint-venture investment adds a sixth flash memory manufacturing facility to the Yokkaichi Plant, enhancing its position as the world's largest flash memory manufacturing site. The first phase of the Y7 facility will produce 3D flash memory including 112- and 162-layer and future nodes.

“We are very pleased to further deepen our strategic partnership with Western Digital through this joint investment in Y7,” said Nobuo Hayasaka, President and CEO of Kioxia. “The rapid digitization of societies underpins accelerating use of memory products. We will continue to leverage our technological partnership and economies of scale to develop and produce cutting-edge semiconductor products and achieve organic corporate growth.”

“This joint investment in Y7 accentuates our productive and positive relationship with Kioxia, underscoring our substantial global share in memory, the ongoing importance of memory and storage and our multi-faceted commitment to Japan,” said Dr. Siva Sivaram, President, Technology & Strategy, Western Digital. “Our strategic partnership with Kioxia has led to the introduction of leading-edge technology while increasing the scale of manufacturing and R&D capabilities. We look forward to continuing to drive long-term success together.”



Tuesday, April 5, 2022

Kioxia builds new fab for its 3D flash memory

 Kioxia held a groundbreaking ceremony for a state-of-the-art semiconductor fabrication facility (Fab2) at its Kitakami Plant in Iwate Prefecture, Japan. 

The new facility will contribute towards possible expansion of production of its proprietary 3D flash memory BiCS FLASHTM at the Kitakami Plant. Construction of the Fab2 facility is scheduled to be completed in 2023.

The Fab2 facility will have an earthquake-absorbing structure and environmentally friendly design that utilizes advanced energy saving manufacturing equipment and renewable energy sources. In addition, an administration building will be constructed to accommodate the control management and technical departments in response to the increased staff.

“As a leader in memory, this Fab2 facility will become Kioxia’s key manufacturing hub to produce our memory products at scale. We are planning to introduce automated in-facility transfers and advanced production control to make Fab2 a truly world-class smart fabrication facility,” said Nobuo Hayasaka, President and CEO, Kioxia. 

https://about.kioxia.com/en-jp/news/2022/20220323-1.html 

Thursday, February 10, 2022

KIOXIA markets 35th anniversary of the invention of NAND flash

Kioxia (formerly Toshiba Memory) marked the  35th anniversary of the company’s invention of NAND flash memory.

Since starting at zero 35 years ago, the NAND flash market has grown to $70B1. In terms of die density, flash memory has grown from 4Mb to 1.33Tb – a 333,000x increase2. To put this exponential growth in perspective, in the 1990s, the largest available density flash memory could hold 1/8 of a photo. Flash forward to today, where the largest available die density is a whopping 1.33Tb – and capable of storing 39,000 photos.

“Flash memory is a game-changer that continues to stand the test of time,” said Scott Nelson, senior vice president and chief marketing officer for KIOXIA America, Inc. “Imagine what’s to come – will the vision of smart cities be realized? Will truly autonomous cars take us from place to place? Whatever the future holds, KIOXIA will continue to lead the way forward, investing in and evolving the technology that makes storage densities higher and costs lower. The sky is the limit for flash memory, and the next wave of applications that will further enrich our lives is just around the corner. In some ways, we’re just getting started.”

https://about.kioxia.com/en-us/flash35.html

Wednesday, February 9, 2022

WD and Kioxia suffer disruption at flash memory fab

Western Digital and Kioxia, its joint venture partner, announced that contamination of certain material used in its manufacturing processes has occurred and is affecting production operations at both its Yokkaichi and Kitakami flash fabrication facilities in Japan.

The anomoly concerns production of  three-dimensional (3D) flash memory BiCS FLASH at both plants. Kioxia does not anticipate that shipment of its conventional 2D NAND flash memory will be affected. 

Western Digital said its current assessment of the impact is a reduction of its flash availability of at least 6.5 exabytes. 


https://about.kioxia.com/en-jp/news/2022/20220210-1.html

Western Digital investor presentation




Tuesday, December 14, 2021

Latest MIPI M-PHY spec doubles data rate to 23.32 Gbps

The MIPI Alliance, announced a major update to its MIPI M-PHY physical-layer interface for connecting the latest generation of flash memory-based storage and other high data rate applications in advanced 5G smartphones, wearables, PCs, industrial IoT, and automobiles. 

Version 5.0 of the M-PHY interface adds a fifth gear—"High Speed Gear 5" (HS-G5) at 23.32 Gigabits per second (Gbps) — enabling engineers to double the potential data rate per lane compared with the previous specification. M-PHY v5.0 also responds to a range of other ecosystem requirements for connecting flash memory storage, such as ongoing innovation of the JEDEC Universal Flash Storage (UFS) standard.

MIPI M-PHY v5.0 is designed to support the forthcoming MIPI UniPro v2.0 and JEDEC UFS releases. In addition to doubling the data rate to a maximum of 23.32 Gbps per lane to satisfy the storage ecosystem’s growing data rate requirements, v5.0 introduces several new capabilities intended to optimize the M-PHY interface:

  • Data rates have been optimized for target applications, simplifying Phased Lock Loop (PLL) implementation and eliminating design complexity.
  • High-speed startup reduces latency, for example, when accessing flash memory on power up.
  • Eye monitoring visualizes signal health, enhancing debug functionality.
  • New attributes for equalization and other electrical updates to HS-G5 improve the suitability of M-PHY for ultra-high data rate applications.

“The significant data rate and flexibility updates delivered in MIPI M-PHY v5.0 are the product of real-world feedback from the large base of implementers in a broad ecosystem," said Joel Huloux, chairman of MIPI Alliance. "Many of the enhancements in v5.0 come from our close relationship with the JEDEC UFS community, and such cross-industry collaboration is key to fueling and aligning innovation to better serve the global flash memory storage market.”

https://www.mipi.org/m-phy-update-doubles-peak-data-rate-for-next-generation-flash-memory-storage-applications

Wednesday, June 24, 2020

Western Digital unveils OpenFlex Data24 NVMe-oF Storage Platform

Western Digital unveiled its new OpenFlex Data24 NVMe-oF Storage Platform, a new shared storage JBOF (Just a Bunch of Flash) enclosure that extends the value of NVMe to multiple hosts over a low-latency Ethernet fabric network. The new enclosure leverages the company's new dual-port, performance Ultrastar DC SN840 NVMe SSDs and in-house RapidFlex NVMe-oF controllers.

The new OpenFlex Data24 holds up to 24 hot-swappable Ultrastar DC SN840 NVMe SSDs, providing up to 368TB in a compact 2U form factor. The newly branded RapidFlex RDMA-enabled NVMe-oF controllers allows up to six hosts to be directly attached with 100Gb Ethernet without the need for an external switch. RapidFlex controllers provide sub-500 nanosecond latency for projected platform performance topping 13M IOPS/70GB/s when adding up to six network adapters to the OpenFlex Data24.

“Data infrastructure has never been as vital to the world’s economy as it is today,” said Yusuf Jamal, senior vice president of Western Digital’s Devices and Platforms Business. “As a leading provider of essential data infrastructure, our mission is to help enterprises architect next-generation data centers to support business-critical applications and bandwidth-hungry workloads at scale. Western Digital’s leadership in NAND Flash, capacity-enterprise HDDs and supporting technologies are being relied upon now more than ever. We’re fully committed to helping companies transition to NVMe and move to new composable architectures that can maximize the value of their data storage resources.”

https://www.westerndigital.com/



Monday, March 16, 2020

Samsung Electronics delivers 512 GB flash storage for smartphones

Samsung Electronics has begun mass producing the first 512-gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 for use in flagship smartphones.

The Samsung 512GB eUFS 3.1 offers a sequential write speed of over 1,200MB/s, which is more than twice the speed of a SATA-based PC (540MB/s) and over ten times the speed of a UHS-I microSD card (90MB/s). This means consumers can enjoy the speed of an ultra-slim notebook when storing massive files like 8K videos or several hundred large-size photos in their smartphones, without any buffering. Transferring contents from an old phone to a new device will also require considerably less time. Phones with the new eUFS 3.1 will only take about 1.5 minutes to move 100GB of data whereas UFS 3.0-based phones require more than four minutes.

In terms of random performance, the 512GB eUFS 3.1 processes up to 60 percent faster than the widely used UFS 3.0 version, offering 100,000 input/output operations per second (IOPS) for reads and 70,000 IOPS for writes.

Along with the 512GB option, Samsung will also have 256GB and 128GB capacities available for flagship smartphones that will be launched later this year.

Wednesday, August 8, 2018

Western Digital outlines OpenFlex architecture data center storage

Western Digital introduced its "OpenFlex" architecture for high-scale private and public cloud data centers.

WD's OpenFlex is a set of open standards, architecture and products that leverage industry-standard NVMf technology and the concept of software composable infrastructure (SCI). The idea is to create independently scalable pools of flash and disk that can be connected to computing resources via common networking technologies, such as Ethernet.

The elements of WD's vision include:

  • A "Kingfish" open API for orchestrating and managing SCI
  • Open product mechanical specifications to enable vendor neutral solutions
  • OpenFlex architecture and initial partner ecosystem
  • OpenFlex product line of flash and disk NVMe-over-Fabric (NVMf) devices

"Data centers need a more efficient approach to satisfying the needs of complex and dynamic applications and data workflows,” said Phil Bullinger, senior vice president and general manager of Data Center Systems at Western Digital. “To ensure flexibility, data center operators also need open solutions that enable them to select from best-in-class, vendor neutral options. Western Digital’s OpenFlex architecture and products, and our commitment to the open community help satisfy these needs, while delivering significant improvements in cost and agility. We’re building on our proven leadership in disk, flash and NVMe storage products to deliver the future of data infrastructure.”


Tuesday, August 7, 2018

Toshiba develops Ethernet-Attached Native NVMe-oF SSD

Toshiba Memory introduced an native NVMe over Fabrics (NVMe-oF) SSD for direct Ethernet access based on the NVMe-oF Specification Version 1.0.

Toshiba Memory's new SSD is powered by the Marvell 88SN2400 NVMe-oF SSD converter controller, enabling dual-port 25Gbps Ethernet connectivity of high-performance U.2 NVMe SSDs. This makes it suitable for cloud data centers and enterprise data centers.

At this week's Flash Memory Summit in Santa Clara, California, Toshiba Memory is showing an Ethernet JBOF prototype chassis that was developed and built by Aupera Technologies. The JBOF is powered by 1+1 redundant 100Gbit Ethernet switch units with dual 6x100 Gbit Ethernet uplinks, which enables 16M IOPS system performance (4KB Random Read), the fastest ever seen in the industry[2].

Thursday, July 19, 2018

Toshiba and Western Digital announce 96-layer BiCS FLASH memory

Toshiba announced 96-layer BiCS FLASH, its proprietary 3D flash memory, with 4-bit-per-cell (quad level cell, QLC) technology that boosts single-chip memory capacity to the highest level yet achieved. The advancement pushes the bit count for data per memory cell from three to four, thus significantly expanding capacity. The new product achieves the industry's maximum capacity of 1.33 terabits for a single chip which was jointly developed with Western Digital Corporation.
A capacity of 2.66 terabytes can be achieved with a 16-chip stacked architecture in one package.

Toshiba Memory will begin sampling to SSD and SSD controller manufacturers from the beginning of September, and expects to start mass production in 2019.


Separately, Western Digital announced its second-generation, four-bits-per-cell architecture for 3D NAND using 96-layer BiCS4 technology. BiCS4 was developed at the joint venture flash manufacturing facility in Yokkaichi, Japan in partnership with Toshiba Memory Corporation. Consumer products marketed under the SanDisk brand are expected to begin shippint this year. Western Digital expects to deploy BiCS4 in a wide variety of applications from retail to enterprise SSDs.

Monday, March 19, 2018

Toshiba delivers data center SSDs based on 64-layer 3-bit-per-cell flash

Toshiba announced its latest line-up of NVM Express (NVMe) and SATA data center solid-state drives (SSDs) based on its 64-layer 3-bit-per-cell TLC (triple-level cell) BiCS FLASH 3D flash memory. The drives feature controllers designed and developed in-house.

The two PCIe® NVMe SSDs are designed to accommodate multiple data center workload profiles, with capacities ranging from 960GB to 7.68TB in a 2.5-inch form factor. These drives deliver up to 500,000 IOPS random read, up to 35,000 IOPS random write, up to 3,140MB/s sequential read, and up to 1,980MB/s sequential write performance within a 9-14W power envelope.

The XD5 Series is a small-footprint M.2 22110 form factor SSD that supports capacities up to 3.84TB and delivers up to 2,600 MB/s sequential read and up to 890MB/s sequential write performance in a 7W power envelope. All three series are optimized for low latency and performance consistency in read-intensive workloads, for Open Compute Project (OCP) and hyper-scale/cloud applications.

The HK6-DC Series is a 6Gbits/s SATA SSD and is available in 960GB, 1.92TB and 3.84TB capacities. It delivers a performance of up to 85,000IOPS random read and 16,000IOPS random write, and up to 550 MB/s sequential read and 500MB/s sequential write.

Monday, December 4, 2017

Samsung cranks out 512-GB Flash for mobiles

Samsung has begun production of the first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) for next-generation mobile devices. A smartphone with 512GB of flash would be capable of storing approximately 130 4K Ultra HD (3840x2160) video clips of a 10-minute duration.

The new devices stack together eight 64-layer 512Gb V-NAND chips and a controller chip.

Samsung said its new 512GB UFS doubles the density of its previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package.

Monday, September 25, 2017

Samsung builds Flash storage for next-gen automotive

Samsung Electronics introduced the first embedded Universal Flash Storage (eUFS) designed specifically for next-generation automotive applications.

The new eUFS, which consists of 128-gigabyte (GB) and 64GB versions, is designed for advanced driver-assistance systems (ADAS), next-generation dashboards and infotainment systems that provide connected features for drivers and passengers worldwide.

Samsung cited read speeds as essential for these applications, especially upcoming automotive infotainment systems for better managing audio content, increasing navigation responsiveness, accessing Internet-enabled traffic and weather reports, improving handling of hands-free voice commands, and speeding up rear-seat social media interplay. The Samsung 128GB eUFS can read data at up to 850 megabytes per second (MB/s), which is approximately 3.4 times faster than the 250MB/s read speed of today’s eMMC 5.0 solutions.  It also offers about 6.4 times faster random reading than eMMC at 45,000 IOPS.

“We are taking a major step in accelerating the introduction of next-generation ADAS and automotive infotainment systems by offering the industry’s first eUFS solution for the market much earlier than expected,” said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. “Samsung is taking the lead in the growth of the memory market for sophisticated automotive applications, while continuing to deliver leading-edge UFS solutions with higher performance, density and reliability.”

Tuesday, August 29, 2017

Pure Storage names Charlie Giancarlo as new CEO

Pure Storage annnounced the appointment of Charlie Giancarlo, replacing Scott Dietzen, who will take on the role of Chairman of the Board.

Giancarlo is known for his leadership roles at Cisco, where he previously served as Chief Technology Officer and Chief Development Officer. Since leaving Cisco, he has shared his management experience across Silver Lake Partners’ portfolio, including as Avaya’s Interim CEO, as well as on the boards of Arista, Accenture and ServiceNow.

https://blog.purestorage.com/august-24th-announcement-1/

Thursday, August 24, 2017

Flash Memory Summit – big changes in non-volatile memory part 3

Hyperconverged platforms, such as those offered by Nutanix, have proven to be extremely successful in the market because they integrate compute, networking and storage in a single, scale-out box. They are a new way of looking at the old problem of how best to connect these three resources. In a similar fashion, the Open Compute Project, which was launched by Facebook six years ago, set out to rethink how compute, storage and networking could be optimised at the rack level to build hyperscale data centres.

What we’re seeing now, as evidenced by the 2017 Flash Memory Summit in Silicon Valley, is that non-volatile memory is advancing at a faster pace than other storage technologies, and at faster pace than compute (CPUs and GPUs), or networking. Ethernet has continued to progress in either 10X or 4X steps, but recently, these have taken time. In data centres, 10G backbones are common. Carrier backbones typically run utilise 100G links.

These statements were true a year ago – or even two years ago. We see some 400G pluggable transceiver apparently ready for market this year. But will 400G be rapidly adopted in either data centres or carrier networks? For a variety of network engineering reasons, implementing 400G in a network is not as easily done as deploying new SSDs with 4 times the capacity as last year’s model.

More importantly, Samsung Electronics has a ten-year roadmap showing how its 3D NANDs will evolve from 4th generation to 5th, 6th, 7th, 8th, 9th and 10th over the course of a decade.

The company says the physics of the last two generations in this progression have yet to be solved but so far look possible. At this point, it seems likely that this rapid evolution will deliver 2X or 3X capacity improvements every two years of less. On the networking side, we’ve seen the Ethernet Alliance publish an Ethernet Roadmap that envisions a proliferation of new interface speeds. This roadmap predicts terabit speed interfaces by 2020, scaling up to 10 terabits/second by 2030. Storage innovation may be winning this race.

Here are some other interesting observations on the storage market.

Western Digital pushes 3D NAND to 96 layers

Western Digital, which received the Flash Memory Summit ‘Best of Show’ award for its BiCS4 technology, has now pushed its 3D NAND technology to 96 layers of vertical storage capability. This marks several years of continuous improvement. In 2016, WD announced 64-layer 3D NAND after achieving 48-layer 3D NAND in 2015. Last month, the company also announced the development of its first four-bits-per-cell (X4) 3D NAND technology. More layers translate into more capacity.
Toshiba faces uncertainty but moves to 64-layer, triple-level Flash

Toshiba’s semiconductor division has been a state-of-turmoil due to restructuring and likely sale. Various suitors have been suggested and apparently rejected either by the company or the Japanese authorities.  Most recently, Toshiba’s management appears to be nearing a deal to sell the business to a consortium led by Bain Capital, although this too may be at an impasse.  The joint venture with SanDisk (a division of WD) focused on flash memory has become mired in legal disputes. Apparently, Toshiba will not ship its latest generation of 96-layer BiCS modules to SanDisk.
Nevertheless, at Flash Memory Summit, Toshiba America Electronic Components (TAEC) introduced its first enterprise SSDs utilizing the 64-layer,3-bit-per-cell TLC (triple-level cell) technology flash memory: the PM5 12Gbit/s SAS series and the CM5 NVM Express (NVMe) series. Toshiba’s PM5 series will be available in a 2.5-inch form factor in capacities from 400GB to 30.72TB], with endurance options of 1, 3, 5 and 10DWPD (drive writes per day). Toshiba also introduced its own consumer SSDs for PCs and laptops based on the same 64-layer technology. Capacity options include 256GB, 512GB, and 1024GB.

Toshiba is also introducing the first MultiLink SAS architecture, enabling up to 3350MB/s of sequential read and 2720MB/s of sequential write in MultiLink mode and 400,000 random read IOPS in narrow or MultiLink mode.

Mellanox looks to NVMe over Fabrics

Mellanox Technologies is pushing ahead with its BlueField System-on-Chip (SoC) for NVMe over a network fabric. BlueField integrates all the technologies needed to connect NVMe over Fabrics flash arrays. It provides 200 Gb/s of throughput and more than 10 million IOPS in a single SoC device. In addition, an on-board multicore ARM processor subsystem enables flexible programmability that allows vendors to differentiate their software-defined storage appliances with advanced capabilities. The BlueField chip can be used to control and connect All Flash Arrays and Just-a-Bunch-Of-Flash (JBOF) systems to InfiniBand and Ethernet Storage fabrics. The Mellanox SoC combines a programmable multicore CPU, networking, storage, security, and virtualization acceleration engines into a single, highly integrated device. Refence storage platforms are now ready.

“By tightly integrating high-speed networking, programmable ARM cores, PCIe switching, cache, memory management, and smart offload technology all in one chip; the result is improved performance, power consumption, and affordability for flash storage arrays. BlueField is a key part of our Ethernet Storage Fabric solution, which is the most efficient way to network and share high-performance storage,” stated Michael Kagan, CTO of Mellanox.

Seagate revs its Nytro Flash storage

Seagate Technology introduced enhanced versions of two flash technologies to boost performance and capacity for mixed data center workloads. The updated solid-state drives — including the 2 TB Nytro 5000 M.2 non-volatile memory express (NVMe) SSD and the Nytro 3000 Serial Attached SCSI (SAS) SSD — address different segments of the cloud and data center markets. The latest Nytro 3000 SAS SSD offers a dual-port SAS interface to maintain data integrity in the event of an unexpected communication channel loss. Capacity is 15TB, more than four times the capacity of the previous version.

Seagate also previewed plans to offer a 64-terabyte (TB) NVMe add-in card (AIC). This forthcoming product boasts a read speed of 13 gigabytes per second (GB/s) — the fastest and highest-capacity SSD ever demonstrated.

“Large-capacity SSDs are in high demand in hyperscale computing, a market that is growing faster than any other sector,” said Jim Handy, general director of research firm Objective Analysis. “Seagate’s new SSDs, with their high-performance interfaces and high capacities, should find ready acceptance in this market and other data center applications.”

WekaIO, a start-up based in San Jose, California with R&D in Israel, introduced a cloud-native scalable file system that scales to exabytes of data in a single namespace while delivering a big performance boost to applications, processing four times the workload compared to IBM Spectrum Scale measured on Standard Performance Evaluation Corp. (SPEC) SFS 2014. A key innovation is that WekaIO eliminates bottlenecks and storage silos by aggregating local SSDs inside the servers into one logical pool, which is then presented as a single namespace to the host applications. A transparent tiering layer offloads cold data to any S3 or Swift cloud object store for unlimited capacity scaling, under the same single namespace.

In partnership with Intel, WekaIO is now demonstrating a native NVMe-oF system using the new “ruler” form factor for Intel SSDs. The companies said this enables a storage capacity of beyond 1PB in 1U while delivering more than 3 million IOPS.

Tuesday, August 22, 2017

Flash Memory Summit – big changes in non-volatile memory - part 2

Over the past year, we’ve seen that HDD capacity increases have plateaued. Spinning disks have been surpassed in storage capacity by SSDs. Performance comparisons between the two is not even a topic of debate. For CIOs, the deployment of flash storage arrays is easy and offers an immediate boost in IOPs for critical applications. More importantly, all the innovation in new drive development has shifted to flash. We are now seeing many approaches being tried in the market to boost SSD performance even further, to scale up to new drive capacities and new array architectures, to adopt new form factors for better rack-scale integration, and increase manufacturing volume to finally meet market demand.

In the first part of this article, we covered Samsung’s rapid progression with 3-D NAND technology. With the arrival of its 5th generation 3D NAND next year we will see 2.5” SSDs soar into the 128TB range. The company says its on-track for 5 more generations of 3-D NAND in the coming decade. In this second part of the article, we’ll look at innovations from another giant, Intel, which has also set its sights on bringing non-volatile memory technologies to the forefront of server, system and data centre design, as well as developments from Nimbus Data and the Gen-Z consortium.

Intel’s non-volatile memory advancements

Intel began shipping its first SSDs as early as 2008 and has been on a continuous improvement path ever since. In 2010, Intel and Micron Technology entered into a partnership focused on NAND flash memory. In 2015, Intel and Micron announced 3D XPoint technology, which was described as the first new memory category since the introduction of NAND flash in 1989, with promises to be up to 1,000 times faster and up to 1,000 times greater endurance than NAND, while being cheaper than DRAM and non-volatile. Intel then adopted the "Optane" brand for products based on thistechnology, while Micron adopted the QuantX brand. Optane is fundamentally different from NAND and uses a combination of unique Intel memory + storage controllers, Intel interconnect IP, and Intel software.

Introducing the memory ruler

Intel's big news at last week's Flash Memory Summit was its new "ruler" form factor for SSD. Instead of the traditional, 2.5" or 3.5" rectangular box for disk drives, Intel's ruler is a long, thin box designed to slide in to a 1" server chassis, plugging in via a PCIe interface at the end of the ruler. It is a slick design. Apart from looking better, the long, thin shape dissipates heat easier. Intel showed a 1” RU server chassis accommodating 32 of these SSD rulers, creating up to 1 petabyte of storage. Intel could offer Optane SSDs and/or 3D NAND SSDs in this form factor.

It’s been a while since a new storage drive format gained widespread acceptance. Intel will need to bring its new form factor to standardization, perhaps via the Open Compute Project, although this was not confirmed. The ruler design should prove to be particularly useful in hyperscale data centres, where plug-n-play convenience is especially useful when 100s of thousands of servers need to be maintained. Intel also noted that its ruler form factor could be used for plug-in accelerators, perhaps FPGA boards optimized for specific functions. No timeline was given for when the ruler might enter the market.

Intel and Attala Systems also announced an FPGA-based accelerated RDMA over Converged Ethernet (RoCE) networking solution designed to serve as high-performance, composable storage infrastructure with features such as self-learning orchestration and provisioning capabilities. The idea is to create an adaptable storage infrastructure that is essentially an elastic block storage (EBS) solution, accelerated. Attala Systems is a start-up based in San Jose, California that was founded by Sujith Arramreddy, who previously co-founded ServerEngines (acquired by Emulex for $250 million in 2010) and ServerWorks (acquired by Broadcom for $1.4 billion in 2001). Attala's CEO is Taufik Ma, who previously was co-GM of Intel's Server System business unit before leaving for a storage/networking start-up. Nimbus Data sees 500 TB SSDs by 2020

Nimbus Data is a privately-held develop of all-flash arrays based in Irvine, California. The company observes that 40 million nearline/high-capacity HDDs are shipped per year, and all of them use the 3.5” form factor. At Flash Memory Summit, Nimbus Data introduced a software and multiprocessor solution for OEMs developing next-generation solid state drives for data centres. Whereas conventional SSDs are based on a single flash controller, Nimbus ExaDrive is based on a distributed multiprocessor architecture. Inside an ExaDrive-powered SSD, multiple ultra-low power ASICs exclusively handle error correction, while an intelligent flash processor provides wear-leveling and capacity management in software. Nimbus sees an opportunity for its ExaDrive being used in super capacity SSDs that let data centers rip-andreplace HDDs with flash. ExaDrive supports the standard SAS interface and is optimized to fully utilize the volume of the 3.5” form factor.

Nimbus said its ExaDrive is used by Viking Technology and SMART Modular Technologies in 50 TB and 25 TB SSDs for cloud infrastructure, technical computing, and digital content storage. The company predicts that its ExaDrive software-defined architecture will enable SSDs as large as 500 TB by the year 2020, achieving up to 600 petabytes in a single rack. This represents a 50x increase over what is possible with HDDs today. “ExaDrive’s software-defined multiprocessor architecture for SSDs delivers a game-changing leap forward in capacity, density, and energy efficiency that HDDs will never be able to recoup,” stated Thomas Isakovich, CEO and Founder of Nimbus Data. “ExaDrive broadens the appeal of flash memory to tier 2 and nearline use cases, enabling flash to become the dominant data center storage media.”

Gen-Z consortium targets data centres

The Gen-Z Consortium is a vendor-led group that is developing an open systems interconnect with memory semantic access to data and devices via direct-attached, switched or fabric topologies. Its major members include AMD, ARM, Broadcom, Cray, Dell EMC, Hewlett Packard Enterprise, Huawei, IDT, Micron, Samsung, SK hynix, and Xilinx. At this year’s Flash Memory Summit, the group had planned it’s the Gen-Z multi-vendor technology demonstration, connecting compute, memory, and I/O devices. Despite the unfortunate fire at a vendor booth on the opening day of the event, the demo was still able to occur in a nearby meeting room.

The demo showed FPGA-based Gen-Z adapters connecting compute nodes to memory pools through a Gen-Z switch, creating a fabric connecting multiple server vendors and a variety of memory vendors. Such a highperformance and scalable fabric/interconnect could be implemented in future data centres. The demo also featured a scalable prototype connector defined by the Gen-Z Consortium, running at 112 giga-transfers/sec. “We are excited to showcase the first technology demonstration of Gen-Z that includes solutions from multiple member companies, including a variety of servers, memory and I/O devices, all connected with a Gen-Z fabric,” said Kurtis Bowman, President of the Gen-Z Consortium. “The consortium continues to meet the planned development schedule and we expect to see initial Gen-Z products in the 2019-2020 timeframe.”

http://genzconsortium.org/

Thursday, August 17, 2017

Flash Memory Summit – big changes in non-volatile memory - part 1

Can you imagine a 128 TB SAS SSD? It is coming soon from Samsung in the familiar 2.5” disk drive package and destined for the next generation of cloud data centres. Leading companies and start-ups from across the storage industry met at this week's Flash Memory Summit in Santa Clara, California. A key takeaway from the event is that solid state storage continues to improve at a rate much faster than networking technologies. Solid state drives surpassed spinning disks in total capacity some time ago - Samsung announced a 16 TB SDD in August 2015 and currently offers a 32 TB SSD, but prices remain high.



The market is driven by unrelenting demand for flash drives in laptops, desktops and servers, especially in cloud data centres where there has been an uptick in spending over the last few quarters. NAND prices on a $/GB are significantly higher than they were 12 months. According to data from Objective Analysis, contract prices for NAND averaged $0.30 per gigabyte on July 2nd, compared to $0.20 per gigabyte a year ago. Looking at Amazon.com, the street price of a 500 GB SSD is about the same in mid-2017 as last summer. Meanwhile, with higher prices and relentless demand in the current market, the leading manufacturers of 3D NAND are doing quite well. For Samsung Electronics, this translated into very strong revenue and earnings for its June financial report, which predicted that a tight market for DRAM and 3D NAND will continue for the rest of the calendar year.

In a presentation at Flash Memory Summit, Jim Handy of Objective Analysis predicted that NAND prices will remain stable at these rates through mid-2018, but will then suddenly collapse due to a saturation of new supply entering the market. His argument goes that all vendors have begun to ship 3D NAND but only in limited volume due to the complexity of mastering 3D NAND manufacturing. Over time, these complexities are being ironed out, manufacturers will move to add additional layers of stacking and the cost per GB will become cheaper for 3D NAND than for 2D planar NAND. Objective Analysis expects a steep oversupply of 3D NAND by late 2018, even before significant new manufacturing facilities in China come online.

Disruption at Flash Memory Summit

This year’s Flash Memory Summit was disrupted on opening day by a fire in the exhibition area, apparently an electrical issue at one of the vendor stands. Thankfully no one was hurt, but the exhibits were cancelled for the remainder of the event. Conferences and keynotes were the forum for technological disruptions, of which there are plenty in this rapidly evolving segment.

Firstly, Samsung made several important announcements and previewed that massive 128 TB SSD. At a fundamental level, Samsung said its 3D NAND roadmap is progressing on schedule. Last year, Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory. This has now gone into production and is being used for products such as the 32TB SSD. Drive capacity and performance are expected to scale up with the upcoming v5 generation of 3D NAND. Samsung has already started work on v6 and v7, with an assumed 18-month interval between each generation. Samsung executives seemed confident they will be able to squeeze at least ten generations out of 3D NAND technology, which provide another decade of continuous improvement if Flash SSD. Beyond that, other non-volatile memory technologies will need to be developed.
Samsung's 1 TB V-NAND chip

Samsung also announced a 1 TB V-NAND chip, slated for commercial production next year, that will enable 2 TB of memory in a single V-NAND package. This is achieved by stacking 16 x 1 TB dies – an advancement the company considers 'one of the most important memory advances of the past decade'.

Samsung is introducing a 16 TB NGSFF (next generation small form factor) SSD that is designed for use in 1U rack servers. Measuring 30.5 x 110 x 4.38 mm, the Samsung NGSFF SSD aims for improved space utilisation and scaling. The company showcased a 1U sample design, codenamed Mission Peak, that pack 36 of the units for a total capacity of 576 TB in the 1 RU appliance. Samsung is looking for partners on this new drive form factor.

In addition, for extreme SSD read/write performance, Samsung introduced its first Z-SSD product, boasting 15 microseconds of read latency time, which is approximately a seventh of the read latency of an NVMe SSD. At the application level, the company estimates its Z-SSDs can reduce system response time by up to 12 fold compared to using NVMe SSDs.

Samsung is also introducing a technology it calls Key Value SSD. Whereas today's SSDs convert object data of widely ranging sizes into data fragments of a specific size called 'blocks', the new Key Value SSD technology allows SSDs to process data without converting it into blocks. Samsung said its Key Value instead assigns a ‘key’, or specific location, to each value, or piece of object data, regardless of its size. The key enables direct addressing of a data location, which in turn enables the storage to be scaled.

Wednesday, March 15, 2017

CNEX Targets Next Gen SSD Controllers for Hyperscale

CNEX Labs, a private semiconductor company based in San Jose, California, closed its Series C round of financing led by Microsoft Ventures and joined by existing CNEX investors, bringing total funding to over $60 million to date.

CNEX is developing solid-state storage controllers and software for cloud, hyperscale, and enterprise data centers.

The company said it is working with tier-one data center customers and manufacturers of solid-state storage, including NAND flash and other storage media, to create a ground-up re-design of the traditional SSD controller architecture.

“CNEX is developing the next big innovation for solid-state storage through semiconductor and software solutions,” said Nagraj Kashyap, corporate vice president at Microsoft Ventures. “As data generation grows, so too must storage systems. Our support will help CNEX accelerate its contribution to new breakthroughs in the evolution toward a cloud-first world.”

“We place a high value on the expertise that comes with this commitment from Microsoft Ventures,” said Alan Armstrong, CEO and Co-Founder of CNEX Labs. “The industry sees impressive leadership from Microsoft in shaping a new generation of data centers, and the strategic guidance from Microsoft Ventures will be a key asset to CNEX as we launch our storage products into mass production for the global data center ecosystem.”

Worldwide data generation is expected to leap from four zettabytes per year in 2013 to 40 zettabytes per year by 2020 (one zettabyte is one billion terabytes). The sheer volume, variety, and velocity of data is driving the need for innovation in data center technology to store and deliver this data.

http://www.cnexlabs.com