GlobalFoundries signs Qualcomm for FinFET fab in New York

by James E. Carroll

GlobalFoundries and Qualcomm Technologies announced a semiconductor manufacturing deal that extends through 2028.

Specifically, the manufacturing agreement extends QGT's U.S. based collaboration with GF in FinFET for 5G transceivers, Wi-Fi, Automotive and IoT connectivity.

The companies said their partnership secures wafer supply and commitments to support U.S.-based manufacturing through capacity expansion at GF's most advanced semiconductor manufacturing facility, in Malta, New York.

"With accelerating demand for 5G, Automotive and IoT applications, a robust supply chain is critical for ensuring innovation in these areas remains uninterrupted," said Dr. Roawen Chen, Senior Vice President and Chief Supply Chain and Operations Officer, Qualcomm Technologies, Inc. "Our continued collaboration with GF helps us to expand the next generation of wireless innovation as we move toward a world where everyone and everything can be intelligently connected."

"GF's global manufacturing footprint enables us to partner with our customers to meet their capacity needs, where they need it," said Dr. Thomas Caulfield, president and CEO of GF. "Our collaboration with Qualcomm Technologies delivers differentiation and innovation in mobile and IoT spanning three continents, and this long-term agreement extension provides Qualcomm Technologies with additional U.S. based manufacturing for a more resilient supply chain."

GF has been manufacturing Qualcomm Technologies' feature rich, high-performance chips for many years, reaching across its global footprint. In 2021, Qualcomm Global Trading Pte. Ltd (QGT), a subsidiary of Qualcomm Technologies, was one of GF's first customers to secure their supply with a long-term agreement covering multiple geographies and technologies. That agreement secured 22FDX capacity at GF's Dresden facility and will now include capacity at GF's recently announced facility in Crolles, France, making QGT an anchor customer in GF's leading European proprietary technology. QGT has also secured capacity in GF's market leading 8SW radio-frequency silicon-on-insulator (RFSOI) technologies for Sub 6GHz 5G front-end module (FEM) which will be primarily manufactured in GF's Singapore facilities, where site expansion plans are well underway with full ramp expected in early 2023.

https://www.investors.gf.com

ST and GlobalFoundries target 300mm fab in France

Monday, July 11, 2022  France, GlobalFoundries, Silicon, ST  

STMicroelectronics and GlobalFoundries agreed to create a new, jointly-operated 300mm semiconductor manufacturing facility adjacent to ST’s existing 300mm facility in Crolles, France. This facility is targeted to ramp at full capacity by 2026, with up to 620,000 300mm wafer per year production at full build-out (~42% ST and ~58% GF).The new facility will support several technologies, in particular FD-SOI-based technologies, and will cover multiple...

READ MORE

Motorola Solutions signs GlobalFoundries to secure radio chip supply

Thursday, May 19, 2022  GlobalFoundries, Motorola Solutions  

Motorola Solutions, which supplies two-way radios for public safety, critical infrastructure and enterprise organizations, signed a long-term agreement with GlobalFoundries to supply chip solutions.The companies point out that several critical chips the company designs for its public safety, professional and commercial radios are manufactured by GF in Vermont. GF's SiGe process technology enables the highly reliable, long-range, secure and clear...

READ MORE

Read More

Samsung and eSilicon tape-out 14 nm network processor

Samsung Electronics announced a successful network processor tape-out based on its 14LPP (low-power plus) process technology that was implemented in collaboration with eSilicon and Rambus.

The network processor tape-out was based on Samsung's advanced foundry process and design infra for network applications, eSilicon's complex ASIC and 2.5D design capability with its IP solutions and a high-speed 28 Gbit/s SerDes solution from Rambus.

Samsung noted that its 14LPP process technology, based on 3D FinFET structure, has been proven for performance and manufacturability through mass production The next generation process for network application is 10LPP process, based on 10LPE (low-power early), for which production commenced last year, with mass production scheduled to begin by the end of 2017.

Samsung has also named its newly developed 2.5D turnkey solution, which serves to connect a logic chip and HBM2 memory via an interposer, as I-Cube (Interposer-Cube). The 14LPP network process chip is the first product to feature its I-Cube solution and HBM2 memory and is designed to support key network applications for high-speed signalling, and potentially further applications such as computing, server and AI in the future.

Commenting on the achievement, Patrick Soheili, VP of product management and corporate development at eSilicon, said, "eSilicon brings its FinFET ASIC and interposer design skills, along with 2.5D integration skills to the project… its HBM Gen2 PHY, custom flip-chip package design and custom memory designs also helped to optimise the power, performance and area for the project".

While Rambus' Luc Seraphin, SVP and GM, memory and interfaces division, noted, "Networking OEMs are looking for quality… IP suppliers that can bring 28 Gbit/s backplane SerDes in advanced FinFET process nodes to market… the success with Samsung and eSilicon is a testament that these leading solutions are attainable…".

http://www.samsung.com

Read More